SFF10N60 copyright@semiwellsemiconductorltd.,allrightsa rereserved semiwell semiconductor absolutemaximumratings(t j =25 unless otherwise specified) symbol parameter ratings units v dss drainsourcevoltage 600 v i d draincurrent t c =25 t c =100 10 6.0 a v gss gatesourcevoltage 30 v i dm draincurrent pulse (note 1) 40 a e as singlepulseavalancheenergy (note 2) 709 mj e ar repetitiveavalancheenergy (note 1) 16.2 mj dv/dt peakdioderecoverydv/dt ( note3) 4.5 v/ns p d powerdissipationt c =25 52 w t j ,t stg operationandstoragetemperaturerange 45~150 n-channel mosfet features r ds(on) max0.75ohmatv gs =10v gatecharge(typical48nc) improvedv/dtcapability,fastswitching 100%avalanchetested general description this mosfet is produced using advanced planar strip dmos technology. this latest technology has been especially designed to minimize onstate resistance have a highruggedavalanchecharacteristics.thesedevice arewell suited for high efficiency switch mode power supply active powerfactorcorrection.electroniclampbasedonh alfbridge topology
SFF10N60 thermalcharacteristics symbol parameter ratings unit r jc thermalresistancejunctiontocase 2.4 /w r cs thermalresistancecasetosinktyp. /w r ja thermalresistancejunctiontoambient 62.5 /w electricalcharacteristics(tc=25 unlessotherwisenoted) symbol items conditions ratings unit min typ. max bv dss drainsourcebreakdownvoltage v gs =0v,i d =250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua,referenceto25 0.7 v/ i dss zerogatevoltagedraincurrent v ds =600v,v gs =0v v ds =480v,t s =125 1 10 ua i gssf gatebodyleakagecurrentforward v gs =30v,v ds =0v 100 na i gssr gatebodyleakagecurrentreverse v gs =30v,v ds =0v 100 na oncharacteristics v gs(th) gatethresholdvoltage v gs =v ds ,i d =250ua 2.0 4.0 v r ds(on) staticdrainsourceonresistance v gs =10v,i d =5a 0.6 0.75 dynamiccharacteristics c iss inputcapacitance v ds =25v,v gs =0v f=1.0mhz 1650 pf c oss outputcapacitance 165 pf c rss reversetransfercapacitance 18 pf 2/3
SFF10N60 switchingcharacteristics symbol items conditions min typ. max units t d(on) turnondelaytime v dd =300v,i d =10.0a r g =25 (note4,5) 25 ns t r turnonrisetime 70 ns t d(off) turnoffdelaytime 140 ns t f turnofffalltime 80 ns q g totalgatecharge v ds =480v,i d =10.0a v gs =10v (note4,5) 48 nc q gs gatesourcecharge 7.0 nc q gd gatedraincharge 18 nc drainsourcediodecharacteristics i s maximumcontinuousdrainsourcediodeforwardcurr ent 10 a i sm maximumpulsedrainsourcediodeforwardcurrent 40 a v sd drainsourcediodeforwardvoltage v gs =0v,i s =10.0a 1.4 v t rr reverserecoverytime v gs =0v,i s =10.0a dl f /dt=100a/us (note4) 430 ns q rr reverserecoverycharge 4.3 uc notes 1. repetitiverating:pulsewidthlimitedbymaxim umjunctiontemperature 2. l=13mh,i as =10.0a,v dd =50v,r g =25,startingt j =25 3. i sd 10.0a,di/dt200a/us,v dd bv dss ,startingt j =25 4. pulsetest:pulsewidth300us,dutycycle2 % 5. essentiallyindependentofoperationtemperature 3/3
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